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? semiconductor components industries, llc, 2011 november, 2011 ? rev. 8 1 publication order number: mmbt3904wt1/d mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp general purpose transistors npn and pnp silicon these transistors are designed for general purpose amplifier applications. they are housed in the sot ? 323/sc ? 70 package which is designed for low power surface mount applications. features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage mmbt3904wt1, SMMBT3904WT1 mmbt3906wt1 v ceo 40 ? 40 vdc collector ? base voltage mmbt3904wt1, SMMBT3904WT1 mmbt3906wt1 v cbo 60 ? 40 vdc emitter ? base voltage mmbt3904wt1, SMMBT3904WT1 mmbt3906wt1 v ebo 6.0 ? 5.0 vdc collector current ? continuous mmbt3904wt1, SMMBT3904WT1 mmbt3906wt1 i c 200 ? 200 madc thermal characteristics characteristic symbol max unit total device dissipation (note 1) @t a = 25 c p d 150 mw thermal resistance, junction ? to ? ambient r ja 833 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on fr4 glass epoxy printed circuit board using the minimum recommended footprint. collector 3 1 base 2 emitter http://onsemi.com device package shipping ? ordering information xx = am for mmbt3904wt1, smmbt3904wt = 2a for mmbt3906wt1 m = date code* =pb ? free package SMMBT3904WT1g sc ? 70/ sot ? 323 (pb ? free) 3000 / tape & reel mmbt3904wt1g sc ? 70/ sot ? 323 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. sc ? 70 (sot ? 323) case 419 style 3 3 1 2 marking diagram xx m 1 mmbt3906wt1g sc ? 70/ sot ? 323 (pb ? free) 3000 / tape & reel
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 2) (i c = 1.0 madc, i b = 0) mmbt3904wt1, SMMBT3904WT1 (i c = ? 1.0 madc, i b = 0) mmbt3906wt1 v (br)ceo 40 ? 40 ? ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) mmbt3904wt1, SMMBT3904WT1 (i c = ? 10 adc, i e = 0) mmbt3906wt1 v (br)cbo 60 ? 40 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) mmbt3904wt1, SMMBT3904WT1 (i e = ? 10 adc, i c = 0) mmbt3906wt1 v (br)ebo 6.0 ? 5.0 ? ? vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) mmbt3904wt1, SMMBT3904WT1 (v ce = ? 30 vdc, v eb = ? 3.0 vdc) mmbt3906wt1 i bl ? ? 50 ? 50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) mmbt3904wt1, SMMBT3904WT1 (v ce = ? 30 vdc, v eb = ? 3.0 vdc) mmbt3906wt1 i cex ? ? 50 ? 50 nadc on characteristics (note 2) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) mmbt3904wt1, SMMBT3904WT1 (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) (i c = ? 0.1 madc, v ce = ? 1.0 vdc) mmbt3906wt1 (i c = ? 1.0 madc, v ce = ? 1.0 vdc) (i c = ? 10 madc, v ce = ? 1.0 vdc) (i c = ? 50 madc, v ce = ? 1.0 vdc) (i c = ? 100 madc, v ce = ? 1.0 vdc) h fe 40 70 100 60 30 60 80 100 60 30 ? ? 300 ? ? ? ? 300 ? ? ? collector ? emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) mmbt3904wt1, SMMBT3904WT1 (i c = 50 madc, i b = 5.0 madc) (i c = ? 10 madc, i b = ? 1.0 madc) mmbt3906wt1 (i c = ? 50 madc, i b = ? 5.0 madc) v ce(sat) ? ? ? ? 0.2 0.3 ? 0.25 ? 0.4 vdc base ? emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) mmbt3904wt1, SMMBT3904WT1 (i c = 50 madc, i b = 5.0 madc) (i c = ? 10 madc, i b = ? 1.0 madc) mmbt3906wt1 (i c = ? 50 madc, i b = ? 5.0 madc) v be(sat) 0.65 ? ? 0.65 ? 0.85 0.95 ? 0.85 ? 0.95 vdc 2. pulse test: pulse width 300 s; duty cycle 2.0%.
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit small ? signal characteristics current ? gain ? bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) mmbt3904wt1, SMMBT3904WT1 (i c = ? 10 madc, v ce = ? 20 vdc, f = 100 mhz) mmbt3906wt1 f t 300 250 ? ? mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) mmbt3904wt1, SMMBT3904WT1 (v cb = ? 5.0 vdc, i e = 0, f = 1.0 mhz) mmbt3906wt1 c obo ? ? 4.0 4.5 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) mmbt3904wt1, SMMBT3904WT1 (v eb = ? 0.5 vdc, i c = 0, f = 1.0 mhz) mmbt3906wt1 c ibo ? ? 8.0 10.0 pf input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) mmbt3904wt1, SMMBT3904WT1 (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) mmbt3906wt1 h ie 1.0 2.0 10 12 k voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) mmbt3904wt1, SMMBT3904WT1 (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) mmbt3906wt1 h re 0.5 0.1 8.0 10 x 10 ? 4 small ? signal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) mmbt3904wt1, SMMBT3904WT1 (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) mmbt3906wt1 h fe 100 100 400 400 ? output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) mmbt3904wt1, SMMBT3904WT1 (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) mmbt3906wt1 h oe 1.0 3.0 40 60 mhos noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k , f = 1.0 khz) mmbt3904wt1, SMMBT3904WT1 (v ce = ? 5.0 vdc, i c = ? 100 adc, r s = 1.0 k , f = 1.0 khz) mmbt3906wt1 nf ? ? 5.0 4.0 db switching characteristics characteristic condition symbol min max unit delay time (v cc = 3.0 vdc, v be = ? 0.5 vdc) mmbt3904wt1, SMMBT3904WT1 (v cc = ? 3.0 vdc, v be = 0.5 vdc) mmbt3906wt1 t d ? ? 35 35 ns rise time (i c = 10 madc, i b1 = 1.0 madc) mmbt3904wt1, SMMBT3904WT1 (i c = ? 10 madc, i b1 = ? 1.0 madc) mmbt3906wt1 t r ? ? 35 35 storage time (v cc = 3.0 vdc, i c = 10 madc) mmbt3904wt1, SMMBT3904WT1 (v cc = ? 3.0 vdc, i c = ? 10 madc) mmbt3906wt1 t s ? ? 200 225 ns fall time (i b1 = i b2 = 1.0 madc) mmbt3904wt1, SMMBT3904WT1 (i b1 = i b2 = ? 1.0 madc) mmbt3906wt1 t f ? ? 50 75 mmbt3904wt1, SMMBT3904WT1 figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 4 mmbt3904wt1, SMMBT3904WT1 typical transient characteristics figure 3. turn ? on time i c , collector current (ma) 70 100 200 300 500 50 figure 4. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) figure 5. storage time i c , collector current (ma) figure 6. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , fall time (ns) f t , storage time (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s - 1 / 8 t f i b1 = i b2 mmbt3904wt1 mmbt3904wt1 mmbt3904wt1 mmbt3904wt1 t j = 25 c t j = 125 c typical audio small ? signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 7. noise figure f, frequency (khz) 4 6 8 10 12 2 0.1 figure 8. noise figure r s , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a mmbt3904wt1 mmbt3904wt1
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 5 mmbt3904wt1, SMMBT3904WT1 h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 9. current gain i c , collector current (ma) 70 100 200 300 50 figure 10. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 11. input impedance i c , collector current (ma) figure 12. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4 mmbt3904wt1 mmbt3904wt1 mmbt3904wt1 mmbt3904wt1 typical static characteristics figure 13. dc current gain i c , collector current (ma) 100 1000 10 1.0 t j = 150 c 25 c -55 c h fe , dc current gain 10 100 1000 v ce = 1 v mmbt3904wt1
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 6 mmbt3904wt1, SMMBT3904WT1 figure 14. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma mmbt3904wt1 figure 15. collector emitter saturation voltage vs. collector current figure 16. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 0.1 0.3 0.4 0.5 0.7 0.8 0.9 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 figure 17. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 0.2 0.6 i c /i b = 10 150 c ? 55 c 25 c i c /i b = 10 150 c ? 55 c 25 c 150 c ? 55 c 25 c v ce = 1 v
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 7 mmbt3904wt1, SMMBT3904WT1 figure 18. temperature coefficients i c , collector current (ma) -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -1.0 -1.5 -2.0 +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) mmbt3904wt1 figure 19. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 c ibo c obo t j = 25 c t j = 125 c mmbt3904wt1 figure 20. current gain bandwidth product vs. collector current figure 21. safe operating area i c , collector current (ma) v ce , collector emitter voltage (v) 1000 100 10 1 0.1 10 100 1000 100 10 1 0.1 0.001 0.01 0.1 1 f t , current ? gain ? bandwidth product (mhz) i c , collector current (a) v ce = 1 v t a = 25 c 1 ms thermal limit 1 s 100 ms 10 ms
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 8 mmbt3906wt1 figure 22. delay and rise time equivalent test circuit figure 23. storage and fall time equivalent test circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns +10.6 v 300 ns duty cycle = 2% < 1 ns +9.1 v 10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics t j = 25 c t j = 125 c figure 24. turn ? on time i c , collector current (ma) 70 100 200 300 500 50 time (ns) 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v mmbt3906wt1 figure 25. fall time i c , collector current (ma) 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , fall time (ns) f v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 mmbt3906wt1 typical audio small ? signal characteristics noise figure variations (v ce = ? 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resistance = 2.0 k i c = 50 a figure 26. f, frequency (khz) 1.0 2.0 3.0 4.0 5.0 0.1 figure 27. r s , source resistance (k ) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4.0 6.0 8.0 10 2.0 12 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) mmbt3906wt1 mmbt3906wt1
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 9 mmbt3906wt1 h parameters h fe , current gain figure 28. current gain i c , collector current (ma) 70 100 200 300 50 figure 29. output admittance i c , collector current (ma) h , output admittance ( mhos) figure 30. input impedance i c , collector current (ma) figure 31. voltage feedback ratio i c , collector current (ma) 30 100 70 10 30 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.5 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ie 0.1 0.2 1.0 2.0 5.0 10 0.5 0.1 0.2 1.0 2.0 5.0 10 0.5 7.0 5.0 0.1 0.2 1.0 2.0 5.0 10 0.5 -4 (v ce = ? 10 vdc, f = 1.0 khz, t a = 25 c) 50 20 ) mmbt3906wt1 mmbt3906wt1 mmbt3906wt1 mmbt3906wt1 0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0 static characteristics figure 32. dc current gain i c , collector current (ma) 100 1000 10 1.0 t j = 150 c 25 c -55 c h fe , dc current gain 10 100 1000 v ce = 1 v mmbt3906wt1
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 10 mmbt3906wt1 figure 33. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma mmbt3906wt1 figure 34. collector emitter saturation voltage vs. collector current figure 35. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 0.05 0.15 0.20 0.25 0.40 0.45 0.50 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 figure 36. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 0.10 0.30 i c /i b = 10 150 c ? 55 c 25 c i c /i b = 10 150 c ? 55 c 25 c 150 c ? 55 c 25 c v ce = 1 v 0.35
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 11 mmbt3906wt1 figure 37. temperature coefficients i c , collector current (ma) -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vs for v be(sat) v , temperature coefficients (mv/ c) mmbt3906wt1 c ibo c obo figure 38. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 t j = 25 c t j = 125 c mmbt3906wt1 figure 39. current gain bandwidth product vs. collector current figure 40. safe operating area i c , collector current (ma) v ce , collector emitter voltage (v) 1000 100 10 1 0.1 10 100 1000 100 10 1 0.1 0.001 0.01 0.1 1 f t , current ? gain ? bandwidth product (mhz) i c , collector current (a) v ce = 1 v t a = 25 c 1 ms thermal limit 1 s 100 ms 10 ms
mmbt3904wt1, npn, SMMBT3904WT1, npn, mmbt3906wt1, pnp http://onsemi.com 12 package dimensions sc ? 70 (sot ? 323) case 419 ? 04 issue n a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 style 3: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmbt3904wt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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